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 IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252
Vorlaufige Daten / Preliminary Data
Wesentliche Merkmale * Infrarot LED mit sehr hoher Ausgangsleistung * Emissionswellenlange typ. 850 nm Anwendungen * Infrarotbeleuchtung fur CMOS Kameras * IR-Datenubertragung * Sensorik Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Features * High Power Infrared LED * Peak wavelength typ. 850 nm Applications * Infrared Illumination for CMOS cameras * IR Data Transmission * Optical sensors Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Typ Type SFH 4252
1)
Bestellnummer Ordering Code Q65110A2468
Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) >10 (typ. 16)
gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr
ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device
2007-04-25
1
SFH 4252
Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwartsgleichstrom Forward current Stostrom, tp = 200 s, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value - 40 ... + 100 5 100 1 180 450 Einheit Unit C V mA A mW K/W
Top , Tstg VR IF IFSM Ptot
Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Symbol Symbol peak
200
K/W
Wert Value 850
Einheit Unit nm
35
nm
60 0.09 0.3 x 0.3
Grad deg. mm2 mm
A LxB LxW
2007-04-25
2
SFH 4252
Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Symbol Symbol Wert Value 12 Einheit Unit ns
tr , tf
VF VF IR
1.5 (< 1.8) 2.4 (< 3.0)
V V
not designed for A reverse operation 40 mW
e typ
Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA
- 0.5
%/K
TCV TC
- 0.7 + 0.2
mV/K nm/K
2007-04-25
3
SFH 4252
Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s
1)
Symbol SFH 4252 -R Ie min Ie max Ie typ 10 20 100
Werte Values SFH 4252 -S 16 32 140
Einheit Unit mW/sr mW/sr mW/sr
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1)
Abstrahlcharakteristik Radiation Characteristics Irel = f ()
40 30 20 10 0
OHL01660
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
2007-04-25
4
SFH 4252
Relative Spectral Emission Irel = f ()
100 %
OHL01714
Radiant Intensity
Ie = f (IF) Ie 100 mA
OHL01715
Single pulse, tp = 20 s
101
Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W
120
OHR00883
Ie I e (100 mA)
F
mA 100
I rel 80
10 5
60
0
80 R thjA = 450 K/W
10
40
-1
60
5
40
10-2
20
5
20
0 700
750
800
850
nm 950
10-3 0 10
0
5 10 1
5 10 2
mA 10 3
0
20
40
60
80
IF
100 C 120 TA
Forward Current IF = f (VF) Single pulse, tp = 20 s
Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter
OHL01713
IF
10 A
0
IF
1.2 A 1.0
OHF02506
D = TP
t
tP
IF T
10 -1 5
D=
0.8 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1
10 -2 5
0.6
0.4
10 -3 5
0.2
10 -4
0
0.5
1
1.5
2
2.5 V 3
VF
0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102
tp
2007-04-25
5
SFH 4252
Mazeichnung Package Outlines
3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083)
2.1 (0.083) 1.7 (0.067) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028)
3.7 (0.146) 3.3 (0.130) 41
A
(2.4) (0.095)
3.4 (0.134) 3.0 (0.118)
C
1.1 (0.043) 0.5 (0.020)
Cathode marking
0.18 (0.007) 0.12 (0.005)
0.6 (0.024) 0.4 (0.016)
GPLY6724
Mae in mm (inch) / Dimensions in mm (inch).
Gehause / Package Anschlussbelegung Pin configuration
TOPLED(R), klarer Verguss / TOPLED(R), clear resin
siehe Zeichnung see drawing
2007-04-25
6
SFH 4252
Empfohlenes Lotpaddesign Recommended Solder Pad Design
2.6 (0.102)
1.5 (0.059)
4.5 (0.177)
2.6 (0.102)
Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Lotstopplack Solder resist Cu-Flache > 16 mm 2 Cu-area > 16 mm 2
OHLPY970
Mae in mm (inch) / Dimensions in mm (inch).
2007-04-25
7
1.5 (0.059)
4.5 (0.177)
SFH 4252
Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering
300 C 255 C 240 C 217 C 200 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 C 0 0 50 100 150 200 250 s 300 100 s max Ramp Down 6 K/s (max) 10 s min
Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C)
OHLA0687
T 250
Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile
C 260 C +0C -5 245 C 5 C C 235 C +5C -0
50
t
Wellenloten (TTW) TTW Soldering
300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s
(nach CECC 00802) (acc. to CECC 00802)
OHLY0598
10 s
Normalkurve standard curve Grenzkurven limit curves
0 0 50 100 150 t 200 s 250
2007-04-25
8
SFH 4252
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-25 9


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